Optimizing the optoelectronic properties of broadband FeS2/Si photodetectors via deposition temperature tuning in chemical bath deposition

Abstract This study investigates the fabrication and characterization of n-FeS2/p-Si heterojunction photodetectors using chemical bath deposition (CBD) at deposition temperatures ranging from 50 °C to 80 °C. The impact of temperature on the structural, morphological, and optical properties of FeS2 thin films was evaluated. X-ray diffraction (XRD) revealed polycrystalline cubic FeS2 with improved crystallinity as the deposition temperature increased. The optical energy gaps of the films ranged from 2.41 eV to 1.6 eV, decreasing with higher temperatures. Scanning electron microscopy